Light emitting diode infrared radiation from the high efficiency of material (often made of PN junction GaAs GaAs), plus the forward bias injection current to the PN junction infrared light excitation. The spectral power distribution of the central wavelength of 830 ~ 950nm, half peak bandwidth is about 40nm. Its biggest advantage is completely free of red storm, (with 940 ~ 950nm wavelength infrared tube) or only faint red storm (red storm for visible light) and extend the service life.

You can convert electric energy into light energy; often abbreviated LED. Light emitting diode with ordinary diode is composed by a PN junction, has a single conductivity. As to a light emitting diode with forward voltage, from area P injected into the N region and N region of hole by electrons injected into the P region, the PN junction near a few microns in e-commerce and P District N District of hole composite, produce spontaneous emission of fluorescence.

PN junction structure of light emitting diode with semiconductor diode, it has the characteristics of general diodes have, namely the forward conduction and reverse cutoff and breakdown. Led by GaAs (Shen Huajia), GaP (Lin Huajia), GaAsP (P Shen Huajia) semiconductor is made, when the light emitting diode conduction can light.